Method for ion source component cleaning

A method for preventing or reducing the formation of deposits of elements contained within a dopant gas in an ion source component of an ion implanter, wherein said ion source component comprises an ionization chamber and one or more components contained within said ionization chamber, said method comprising:

• introducing into said ionization chamber a dopant gas;
• introducing into said ionization chamber a cleaning gas, said cleaning gas comprising a mixture of F2, one or more inert gases selected from noble gases and/or nitrogen, and optionally O2, or a mixture of an oxygen/fluorine-containing gas and one or more inert gases selected from noble gases and/or nitrogen;
• and
• reacting said dopant gas and said cleaning gas under conditions sufficient to prevent the formation of deposits of elements contained within said dopant gas on the interior of said ionization chamber and/or on said one or more components contained within said ionization chamber;
• or reacting said dopant gas, and deposits forming on the interior of said ionization chamber and/or on said one or more components contained within said ionization chamber during ionization of said dopant gas, with said cleaning gas under conditions sufficient to reduce the formation of deposits on the interior of said ionization chamber and/or on said one or more components contained within said ionization chamber.

A method for preventing or reducing the formation of deposits of elements contained within carborane (C2B10H12) dopant gas in an ion source component of an ion implanter, wherein said ion source component comprises an ionization chamber and one or more components contained within said ionization chamber, said method comprising:

• introducing into said ionization chamber a dopant gas, said dopant gas comprising carborane (C2B10H12);
• introducing into said ionization chamber a cleaning gas, said cleaning gas comprising a mixture of F2, one or more inert gases selected from noble gases and/or nitrogen, and optionally O2, or a mixture of an oxygen/fluorine-containing gas and one or more inert gases selected from noble gases and/or nitrogen;
• and
• reacting said dopant gas and said cleaning gas under conditions sufficient to prevent the formation of deposits of elements contained within said carborane (C2B10H12) dopant gas on the interior of said ionization chamber and/or on said one or more components contained within said ionization chamber;
• or reacting said dopant gas, and deposits forming on the interior of said ionization chamber and/or on said one or more components contained within said ionization chamber during ionization of said dopant gas, with said cleaning gas under conditions sufficient to reduce the formation of deposits on the interior of said ionization chamber and/or on said one or more components contained within said ionization chamber.