Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device having a first region and a second region in a main surface of a semiconductor substrate comprising the steps of:

• forming a first insulating film over the main surface of the semiconductor substrate;
• forming a first wiring trench extending in a first direction in the first insulating film;
• forming a first wiring main body in the first wiring trench;
• forming a second insulating film over the first insulating film so as to cover the first wiring main body;
• forming a magnetoresistive element over the surface of the second insulating film;
• forming a third insulating film over the second insulating film so as to cover the magnetoresistive element;
• forming a first opening to expose the magnetoresistive element in the third insulating film;
• forming a first electroconductive film constituted by a non-magnetic material over the third insulating film so as to fill up the first opening;
• removing a portion of the first electroconductive film lying over the upper surface of the third insulating film to form a first conductor portion electrically coupled to the magnetoresistive element by a portion of the first electroconductive film left in the first opening;
• forming a fourth insulating film over the third insulating film so as to cover the first conductor portion;
• forming a second wiring trench extending in a second direction intersecting the first direction in the fourth insulating film so that the first conductor portion is exposed at the bottom surface;
• forming a magnetic field-shielding layer that shields a magnetic field over the side wall of the second wiring trench in a mode that excludes the bottom surface of the second wiring trench;
• and
• forming a second wiring main body electrically coupled to the magnetoresistive element via the first conductor portion in the second wiring trench.