Nonvolatile memory system using data interleaving scheme
AssigneeSamsung Electronics Co., Ltd.
InventorsHyun-Ju KIM, Chang-Eun CHOI, Taekeun JEON, Kyoung Ryun BAE
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Abstract
A memory system comprises a plurality of nonvolatile memory devices configured for interleaved access. Programming times are measured and recorded for various memory cell regions of the nonvolatile memory devices, and interleaving units are formed by memory cell regions having different programming times.
Claims20
A method of programming a memory system comprising a plurality of nonvolatile memory devices connected to a common input/output channel, the method comprising:
- determining programming times for data regions of the plurality of nonvolatile memory devices, wherein some of the data regions have a first programming time and some of the data regions have a second programming time longer than the first programming time;
- defining an interleaving unit comprising a data region having the first programming time and a data region having the second programming time in a first nonvolatile memory device, and a data region having the first programming time and a data region having the second programming time in a second nonvolatile memory device;
- and
- programming the data regions of the interleaving unit in a sequence beginning with the data regions having the first programming time, followed by the data regions having the second programming time.
A method of configuring an interleaving unit in a memory system comprising a plurality of nonvolatile memory devices and a memory controller, the method comprising:
- selecting a plurality of memory cell regions of the nonvolatile memory devices as a programming time measurement group;
- executing programming operations on the selected memory cell regions and recording programming times of the selected memory cell regions based on the programming operations;
- and
- configuring an interleaving unit to be used as a unit of an interleaving operation based on the recorded programming times.
A memory system, comprising:
- a plurality of nonvolatile memory devices;
- and
- a memory controller that exchanges data with the nonvolatile memory devices through at least one channel, selects a plurality of memory cell regions of the nonvolatile memory devices as a programming time measurement group, executes programming operations on the selected memory cell regions and recording programming times of the selected memory cell regions based on the programming operations, and configures an interleaving unit to be used as a unit of an interleaving operation based on the recorded programming times;
- wherein the nonvolatile memory devices comprise a first nonvolatile memory device and a second nonvolatile memory device, and
- wherein the memory controller sequentially drives first and second programming units in the first and second nonvolatile memory devices, the first programming units having a first programming time, and the second programming units having a second programming time longer than the first programming time.
Dependencies are inferred from the claim text.