Semiconductor Device and Method for Manufacturing the Same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsMasahiko Hayakawa, Mitsunori Sakama, Satoshi Toriumi
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Abstract
An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.
Claims21
1-13. (canceled)
A cellular phone having a display device, the display device comprising:
- a first insulating layer formed over an insulating substrate, the first insulating layer comprising silicon, nitrogen, and oxygen;
- and
- a pixel matrix circuit formed over the first insulating layer, the pixel matrix circuit comprising a plurality of pixels;
- wherein a concentration ratio of nitrogen to silicon of the first insulating layer ranges from 0.3 to 1.6, and
- wherein a concentration of nitrogen of the first insulating layer is higher than 2×1020 atoms/cm3.
A cellular phone having a display device, the display device comprising:
- a first insulating layer formed over an insulating substrate, the first insulating layer comprising silicon, nitrogen, and oxygen;
- a pixel matrix circuit formed over the first insulating layer, wherein the pixel matrix circuit comprises at least a pixel having a thin film transistor;
- a gate driver circuit formed over the first insulating layer;
- a source driver circuit formed over the first insulating layer;
- and
- a liquid crystal interposed between the insulating substrate and a second substrate,
- wherein a concentration ratio of nitrogen to silicon of the first insulating layer ranges from 0.3 to 1.6, and
- wherein a concentration of nitrogen of the first insulating layer is higher than 2×1020 atoms/cm3.
A cellular phone having a display device, the display device comprising:
- a first insulating layer formed over an insulating substrate, the first insulating layer comprising silicon, nitrogen, and oxygen;
- a pixel matrix circuit formed over the first insulating layer, wherein the pixel matrix circuit comprises at least a pixel having a thin film transistor;
- a gate driver circuit formed over the first insulating layer;
- a source driver circuit formed over the first insulating layer;
- and
- a light emitting element formed over the insulating substrate and being operated by the thin film transistor,
- wherein a concentration ratio of nitrogen to silicon of the first insulating layer ranges from 0.3 to 1.6, and
- wherein a concentration of nitrogen of the first insulating layer is higher than 2×1020 atoms/cm3.
Dependencies are inferred from the claim text.