Localized anneal
AssigneesChartered Semiconductor Manufacturing Ltd., Nanyang Technological University
InventorsDexter TAN, Chee Chong LIM, Sai Hooi YEONG, Chee Mang NG
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Abstract
A method of forming a device is presented. The method includes providing a wafer having an active surface and dividing the wafer into a plurality of portions. The wafer is selectively processed by localized heating of a first of the plurality of portions. The wafer is then repeatedly selectively processed by localized heating of a next of the plurality of portions until all plurality of portions have been selectively processed.
Claims20
A method of forming a device comprising:
- providing a wafer having an active surface;
- dividing the wafer into a plurality of portions;
- selectively processing the wafer by localized heating of a first of the plurality of portions;
- and
- repeatedly selectively processing the wafer by localized heating of a next of the plurality of portions until all plurality of portions have been selectively processed.
A method of fabricating an article comprising:
- providing an article having an active surface;
- dividing the article into a plurality of portions;
- selectively processing the article by localized processing of a first of the plurality of portions;
- and
- repeatedly selectively processing the article by localized heating of a next of the plurality of portions until all plurality of portions have been selectively processed.
A semiconductor processing system comprising:
- a stage for mounting a substrate to be processed;
- means for dividing the substrate into a plurality of portions;
- means for selectively processing the article by localized processing of a first of the plurality of portions;
- and
- means for repeatedly selectively processing the article by localized heating of a next of the plurality of portions until all plurality of portions have been selectively processed.
Dependencies are inferred from the claim text.