Formation of silicon oxide using non-carbon flowable cvd processes
AssigneeApplied Materials, Inc.
InventorsJingmei Liang, Nitin K. Ingle, Shankar Venkataraman
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Abstract
A method of forming a silicon oxide layer is described. The method may include the steps of mixing a carbon-free silicon-and-nitrogen containing precursor with a radical precursor, and depositing a silicon-and-nitrogen containing layer on a substrate. The silicon-and-nitrogen containing layer is then converted to the silicon oxide layer.
Claims23
A method of forming a silicon oxide layer, the method comprising:
- mixing a carbon-free silicon-and-nitrogen containing precursor with a radical precursor;
- depositing a silicon-and-nitrogen containing layer on a substrate;
- and
- converting the silicon-and-nitrogen containing layer to the silicon oxide layer.
A method of forming a silicon oxide layer with reduced volume shrinkage, the method comprising:
- providing a substrate containing a least one gap;
- depositing a carbon-free silicon-and-nitrogen containing layer on the substrate;
- and
- heating the substrate in an oxygen-containing atmosphere to convert the carbon-free silicon-and-nitrogen containing layer to the silicon oxide layer, wherein the silicon oxide layer retains a volume of about 85% or more of the carbon-free silicon-and-nitrogen containing layer deposited in the gap.
A plasma chemical vapor deposition method of forming a silicon oxide layer, the method comprising:
- introducing a carbon-free silicon-and-nitrogen containing precursor, and a radical precursor to a reaction chamber containing a substrate;
- forming a plasma from a mixture comprising the carbon-free silicon-and-nitrogen containing precursor and the radical precursor;
- depositing a silicon-and-nitrogen containing layer on the substrate from the plasma;
- and
- converting the silicon-and-nitrogen containing layer into the silicon oxide layer.
Dependencies are inferred from the claim text.