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AssigneesNational University Corporation Tohoku University, Stella Chemifa Corporation
InventorsTadahiro Ohmi, Akinobu Teramoto, Rui Hasebe, Masayuki Miyashita
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Disclosed is a method for cleaning a semiconductor substrate that can solve a problem of a conventional cleaning method which should include at least five steps for cleaning a substrate such as a semiconductor substrate. The method for cleaning a semiconductor substrate comprises a first step of cleaning a substrate with ultrapure water containing ozone, a second step of cleaning the substrate with ultrapure water containing a surfactant, and a third step of removing an organic compound derived from the surfactant, with a cleaning liquid containing ultrapure water and 2-propanol. After the third step, plasma of noble gas such as krypton is applied to the substrate to further remove the organic compound derived from the surfactant.
A semiconductor device manufacturing method comprising performing a first step of cleaning, with ultrapure water containing ozone, a semiconductor surface of a substrate of which at least the surface is a semiconductor, a second step of cleaning the surface with a cleaning liquid containing hydrofluoric acid, hydrogen peroxide, ultrapure water, and a surfactant while applying vibration at a frequency of 500 kHz or more, a third step of cleaning the surface with a cleaning liquid containing 2-propanol and ultrapure water, and then a step of forming a gate insulating film on the surface after irradiation of plasma of a noble gas onto the surface.
A semiconductor substrate cleaning method comprising a first step of carrying out cleaning with ultrapure water containing ozone, a second step of carrying out cleaning with a cleaning liquid containing hydrofluoric acid, hydrogen peroxide, ultrapure water, and a surfactant while applying vibration at a frequency of 500 kHz or more, and a third step of carrying out cleaning with a cleaning liquid containing 2-propanol and ultrapure water.
A cleaning method comprising cleaning a semiconductor substrate with a cleaning liquid containing a surfactant and then removing the surfactant remaining on the semiconductor substrate with a cleaning liquid containing 2-propanol and ultrapure water.
Dependencies are inferred from the claim text.