Method of manufacturing semiconductor device
AssigneeAtto Co., Ltd.
InventorYoung Soo Kwon
Life of this patent
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Abstract
Provided is a method of manufacturing a semiconductor device. In the method, after a thin liner is formed on a substrate on which a lower interconnection is formed, a silicon source is supplied to form a silicide layer under the liner by a reaction between the silicon source and the lower interconnection, and the silicide layer is nitrided and an etch stop layer is formed. Therefore, the lower interconnection is prevented from making contact with the silicon source, variations of the surface resistance of the lower interconnection can be prevented, and thus high-speed devices can be fabricated.
Claims14
A method of manufacturing a semiconductor device, the method comprising:
- preparing a semiconductor substrate on which a lower interconnection is formed;
- forming a liner on the semiconductor substrate;
- forming a silicide layer on the lower interconnection under the liner;
- nitriding the silicide layer;
- and
- depositing a thin layer on the liner.
A method of manufacturing a semiconductor device, the method comprising:
- preparing a semiconductor substrate on which a lower interconnection is formed;
- forming a liner on the semiconductor substrate by using a first source and a second source;
- forming a silicide layer on the lower interconnection under the liner by using the second source;
- nitriding the silicide layer by using the first source;
- and
- depositing a thin layer by using the first and second sources.
Dependencies are inferred from the claim text.