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US 2011/0034031 A1Published application
Manufacturing method of semiconductor device including etching step
AssigneeDenso Corporation
InventorsKatsuhiko Kanamori, Masashi Totokawa, Hiroshi Tanaka
Life of this patent
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Abstract
A manufacturing method of a semiconductor device includes: irradiating a laser beam on a single crystal silicon substrate, and scanning the laser beam on the substrate so that a portion of the substrate is poly crystallized, wherein at least a part of a poly crystallized portion of the substrate is exposed on a surface of the substrate; and etching the poly crystallized portion of the substrate with an etchant. In this case, a process time is improved.
Claims11
A manufacturing method of a semiconductor device comprising:
- irradiating a laser beam on a single crystal silicon substrate, and scanning the laser beam on the substrate so that a portion of the substrate is poly crystallized, wherein at least a part of a poly crystallized portion of the substrate is exposed on a surface of the substrate;
- and
- etching the poly crystallized portion of the substrate with an etchant.
Dependencies are inferred from the claim text.