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AssigneeSamsung Electronics Co., Ltd.
InventorsSang-yong Park, Jae-kwan Park, Yong-sik Yim, Jaw-hwang Sim
Estimating the term…
A method of forming minute patterns in a semiconductor device, and more particularly, a method of forming minute patterns in a semiconductor device having an even number of insert patterns between basic patterns by double patterning including insert patterns between a first basic pattern and a second basic pattern which are transversely separated from each other on a semiconductor substrate, wherein a first insert pattern and a second insert pattern are alternately repeated to form the insert patterns, the method includes the operation of performing a partial etching toward the second insert pattern adjacent to the second basic pattern, or the operation of forming a shielding layer pattern, thereby forming the even number of insert patterns.
-12. (canceled)
A method of manufacturing a semiconductor device in which an even number of insert patterns are formed by double patterning between a first basic pattern disposed at a left side and a second basic pattern disposed at a right side which are transversely separated from each other on a semiconductor substrate, wherein a first insert pattern and a second insert pattern are alternately repeated to form the insert patterns, the method comprising:
Dependencies are inferred from the claim text.