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US 2011/0034028 A1Published application
Method for manufacturing semiconductor device having porous low dielectric constant layer formed for insulation between metal lines
AssigneeHynix Semiconductor Inc.
InventorChang Soo PARK
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Abstract
The present invention related to a method for manufacturing a semiconductor device. More particularly, this method describes how to manufacture a semiconductor device having a porous, low dielectric constant layer formed between metal lines, comprising an insulation layer enveloping fillers.
Claims20
A method for manufacturing a semiconductor device, comprising the step of:
- forming a porous low dielectric constant layer for insulation between metal lines,
- wherein the porous low dielectric constant layer comprises an insulation layer including fillers, and the fillers comprise silicon.
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a porous low dielectric constant layer including fillers made of silicon on a semiconductor substrate which is formed with a lower metal line;
- etching the porous low dielectric constant layer so as to expose the lower metal line and defining a metal line forming region in which an upper metal line is to be formed;
- and
- filling a metal layer in the metal line forming region so as to form an upper metal line which comes into contact with the lower metal line.
1 more element
A method for manufacturing a semiconductor device, comprising the step of:
- forming a porous low dielectric constant layer having a double-layered structure for insulation between metal lines,
- wherein the porous low dielectric constant layer comprises an insulation layer including fillers, and
- wherein the porous low dielectric constant layer having the double-layered structure is formed such that an upwardly positioned layer has a lower dielectric constant than a downwardly positioned layer.
Dependencies are inferred from the claim text.