Silicon carbide film for integrated circuit fabrication

The method of claim 19, further comprising the steps of:

• forming a first layer of photoresist over the first layer of the silicon carbide containing film;
• patterning the first layer of photoresist to define a first set of via regions;
• etching the first layer of said silicon carbide containing film in the first set of via regions;
• and
• etching the second electrically insulating layer in the first set of via regions.

A method of forming an integrated circuit, comprising the steps of:

• providing a substrate;
• forming a transistor on the substrate;
• forming a first electrically insulating layer over the transistor;
• forming a first layer of a silicon carbide containing film over the first electrically insulating layer, the silicon carbide containing film being formed by a process comprising the steps of:
• positioning the substrate in a plasma reactor;
• flowing 100 to 2000 sccm (standard cubic centimeters per minute) of hydrogen gas into the plasma reactor;
• and
• generating a plasma comprising the hydrogen gas in the plasma reactor;
• forming a first layer of photoresist over the first layer of the silicon carbide containing film;
• patterning the first layer of photoresist to define a first set of contact regions;
• etching the first layer of the silicon carbide containing film in the first set of contact regions;
• etching the first electrically insulating layer in the first set of contact regions;
• depositing contact metal over the first layer of the silicon carbide containing film and in the first set of contact regions;
• and
• selectively removing the contact metal from a top surface of the first layer of the silicon carbide containing film.

The method of claim 20, further comprising the steps of:

• forming a second electrically insulating layer over the the transistor;
• forming a second layer of said silicon carbide containing film over the second electrically insulating layer,
• forming a second layer of photoresist over the second layer of the silicon carbide containing film;
• patterning the second layer of photoresist to define a first set of via regions;
• etching the second layer of the silicon carbide containing film in the first set of via regions;
• and
• etching the second electrically insulating layer in the first set of via regions.

A method of forming an integrated circuit, comprising the steps of:

• providing a substrate;
• forming a transistor on the substrate;
• forming a first electrically insulating layer over the transistor;
• forming a first layer of a silicon carbide containing film over the first electrically insulating layer, the silicon carbide containing film being formed by a process comprising the steps of:
• positioning the substrate in a plasma reactor;
• flowing 100 to 2000 sccm (standard cubic centimeters per minute) of hydrogen gas into the plasma reactor;
• and
• generating a plasma comprising the hydrogen gas in the plasma reactor;
• forming a first layer of photoresist over the first layer of the silicon carbide containing film;
• patterning the first layer of photoresist to define a first set of contact regions;
• etching the first layer of the silicon carbide containing film in the first set of contact regions;
• and
• etching the first electrically insulating layer in the first set of contact regions.

The method of claim 21, further comprising the steps of:

• forming a second electrically insulating layer over the transistor;
• forming a second layer of the silicon carbide containing film over the second electrically insulating layer,
• forming a second layer of photoresist over the second layer of the silicon carbide containing film;
• patterning the second layer of photoresist to define a first set of via regions;
• etching the second layer of the silicon carbide containing film in the first set of via regions;
• and
• etching the second electrically insulating layer in the first set of via regions.

A method of forming an integrated circuit, comprising:

• providing a substrate including an active area isolated by field oxide;
• forming a dielectric liner layer over the active area and field oxide;
• forming a dielectric layer over the dielectric liner layer;
• forming a dielectric cap layer over the dielectric layer, the dielectric cap layer comprising a silicon carbide containing film;
• the silicon carbide containing film being generated in a plasma reactor using gases that include tri-methyl silane, helium and 100-2000 sccm (standard cubic centimeters per minute) of hydrogen;
• etching holes through the dielectric cap layer, the dielectric layer and the dielectric liner layer;
• depositing a fill metal in the holes and over the dielectric cap layer;
• and
• removing at least a portion of the fill metal from over the dielectric cap layer.