Semiconductor package and fabrication method

A method of fabricating a semiconductor package, comprising the steps of:

• forming at least a recess on the surface of a support member;
• forming a metal layer on the inner surface of the recess and an extension over a part of the surface of the support member adjacently to the inner surface;
• covering an insulating resin on the surface of the support member and the inner surface of the recess formed with the metal layer;
• forming, on the insulating resin on the extension of the support member, a via hole to which the metal layer on the extension is exposed;
• forming a conductor via in the via hole;
• forming one or a plurality of insulating resin layers and wiring layers on the insulating resin in such a manner that the wiring layers are electrically connected to the conductor via;
• forming, on the uppermost insulating resin layer, a terminal connected to the conductor via through the wiring layers;
• removing the support member and exposing the bump filled with an insulating resin and covered with a metal layer to the bottom surface of the package.

A method of fabricating a semiconductor package, comprising the steps of:

• forming a solder resist layer on the surface of a support member;
• forming at least a recess on the surface of the support member from above the solder resist layer;
• forming a metal layer on the inner surface of the recess of the support member;
• filling an insulating resin in the recess formed with the metal layer and covering the insulating resin on the surface of the solder resist layer;
• forming, on the insulating resin in the recess, a via hole to which the metal layer is exposed;
• forming a conductor via in the via hole;
• forming one or a plurality of insulating resin layers and wiring layers on the insulating resin in such a manner that the wiring layers are electrically connected to the conductor via;
• forming, on the uppermost insulating resin layer, at least a terminal connected to the metal layer through the wiring layers;
• removing the support member and exposing at least a bump filled with an insulating resin and covered with a metal layer to the bottom surface of the package.

A method of fabricating a semiconductor package, comprising the steps of:

• forming a solder resist layer on the surface of a support member;
• forming at least a recess on the surface of the support member from above the solder resist layer;
• forming a metal layer on the inner surface of the recess;
• covering an insulating resin on the surface of the solder resist layer and filling the insulating resin in the inner surface of the recess formed with the metal layer;
• forming, on the insulating resin on the extension of the support member, a via hole to which the metal layer on the extension is exposed;
• forming a conductor via in the via hole;
• forming one or a plurality of insulating resin layers and wiring layers on the insulating resin in such a manner that the wiring layers are electrically connected to the conductor via;
• forming, on the uppermost insulating resin layer, at least a terminal connected to the conductor via through the wiring layers;
• and
• removing the support member and exposing at least a bump filled with an insulating resin and covered with a metal layer to the bottom surface of the package.

A method of fabricating a semiconductor package, comprising the steps of:

• forming at least a recess on each of the two surfaces of a support member;
• forming a metal layer only on the inner surface of the recess on each surface of the support member;
• covering an insulating resin on the interior of the recess formed with the metal layer on each surface of the support member and each surface of the support member;
• forming, on the insulating resin in the recess on each surface of the support member, a via hole to which the metal layer is exposed;
• forming a conductor via in the via hole on each surface of the support member;
• stacking an insulating resin layer and a wiring layer on the insulating resin on each surface of the support member in such a manner that the wiring layer is electrically connected to the conductor via;
• forming a terminal connected to the conductor via through the wiring layer on the uppermost insulating resin layer on each surface of the support member;
• removing the support member and separating the packages formed on the two surfaces of the support member and projecting, from the bottom surface of the package, at least a bump filled with the insulating resin and covered with the metal layer.

A method of fabricating a semiconductor package, comprising the steps of:

• forming at least a recess on each of the two surfaces of a support member;
• forming a metal layer only on the inner surface of the recess on each surface of the support member and an extension over a part of each surface of the support member adjacently to the inner surface;
• covering an insulating resin on each surface of the support member and the inner surface of the recess formed with the metal layer;
• forming, on the insulating resin on the extension of the support member of each surface of the support member, a via hole to which the metal layer on the extension is exposed;
• forming a conductor via in the via hole on each surface of the support member;
• stacking at least an insulating resin layer and at least a wiring layer on the insulating resin on each surface of the support member in such a manner that the wiring layer is electrically connected to the conductor via;
• forming at least a terminal connected to the conductor via through the wiring layer on the uppermost insulating resin layer on each surface of the support member;
• and
• removing the support member, separating the packages formed on the two surfaces of the support member and projecting, from the bottom surface of the package, at least a bump filled with the insulating resin and covered with the metal layer.