Low Temperature Ion Implantation

Abstract

A method of processing to a substrate while minimizing cost and manufacturing time is disclosed. The implantation of the source and drain regions of a semiconductor device are performed at low temperatures, such as below 273° K. This low temperature implant reduces the structural damage caused by the impacting ions. Subsequently, the implanted substrate is activated using faster forms of annealing. By performing the implant at low temperatures, the damage to the substrate is reduced, thereby allowing a fast anneal to be used to activate the dopants, while eliminating the majority of the defects and damage. Fast annealing is less expensive than conventional furnace annealing, and can achieve higher throughput at lower costs.

Dependencies are inferred from the claim text.