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US 2011/0034012 A1Published application
Patterning method and method for manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorYoshihito KOBAYASHI
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Abstract
In one embodiment, a patterning method is disclosed. The method includes applying an uncured imprint material containing a first curing agent and a second curing agent onto a substrate. The method includes pressing a template against the imprint material. The method includes reacting the first curing agent with the template pressed against the imprint material. The method includes stripping the template from the imprint material. In addition, the method includes reacting the second curing agent.
Claims20
A patterning method comprising:
- applying an uncured imprint material containing a first curing agent and a second curing agent onto a substrate;
- pressing a template against the imprint material;
- reacting the first curing agent with the template pressed against the imprint material;
- stripping the template from the imprint material;
- and
- reacting the second curing agent.
3 more elements
A method for manufacturing a semiconductor device, comprising:
- forming a pattern on a semiconductor substrate;
- and
- performing processing on the semiconductor substrate by using the pattern as a mask,
- the forming the pattern includes:
- applying an uncured imprint material containing a first curing agent and a second curing agent onto the substrate;
- pressing a template against the imprint material;
- reacting the first curing agent with the template pressed against the imprint material;
- stripping the template from the imprint material;
- and
- reacting the second curing agent.
7 more elements
Dependencies are inferred from the claim text.