Selective deposition of germanium spacers on nitride
AssigneeInternational Business Machines Corporation
InventorsAshima B. Chakravarti, Anthony I. Chou, Toshiharu Furukawa, Steven J. Holmes, Wesley C. Natzle
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Abstract
A method of selectively forming a germanium structure within semiconductor manufacturing processes removes the native oxide from a nitride surface in a chemical oxide removal (COR) process and then exposes the heated nitride and oxide surface to a heated germanium containing gas to selectively form germanium only on the nitride surface but not the oxide surface.
Claims20
A method of selectively forming a transistor structure comprising:
- forming a first insulator surface on a substrate;
- patterning a gate conductor structure on said first insulator surface;
- implanting source/drain extension implants into regions of said substrate adjacent said gate conductor structure;
- forming second insulator spacers adjacent said gate conductor structure;
- removing native oxide from said second insulator spacers;
- heating said transistor structure;
- and
- exposing said transistor structure to a semiconductor containing gas to selectively form semiconductor structures on said second insulator spacers;
- implanting source and drain implants into said substrate and said gate conductor structure;
- and
- removing said semiconductor structures.
A method of selectively forming a transistor structure comprising:
- forming an oxide surface on a substrate;
- patterning a gate conductor structure on said oxide surface;
- implanting source/drain extension implants into regions of said substrate adjacent said gate conductor structure;
- forming nitride spacers adjacent said gate conductor structure;
- removing native oxide from said nitride spacers;
- heating said transistor structure;
- and
- exposing said transistor structure to a germanium containing gas to selectively form germanium structures on said nitride spacers;
- implanting source and drain implants into said substrate and said gate conductor structure;
- and
- removing said germanium structures.
The method in claim 15, wherein said HF is supplied at twice the flow rate of said NH3.
A method of selectively forming a transistor structure comprising:
- forming an oxide surface on a substrate;
- patterning a gate conductor structure on said oxide surface;
- implanting source/drain extension implants into regions of said substrate adjacent said gate conductor structure;
- forming nitride spacers adjacent said gate conductor structure;
- removing native oxide from said nitride spacers;
- heating said transistor structure;
- exposing said transistor structure to a germanium containing gas to selectively form germanium structures on said nitride spacers;
- implanting source and drain implants into said substrate and said gate conductor structure;
- removing said germanium structures;
- and
- during said exposing process, said germanium structures form only on said nitride spacers and do not form on said oxide surfaces.
Dependencies are inferred from the claim text.