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US 2011/0033999 A1Published application
Doping method, and method for producing semiconductor device
AssigneeSony Corporation
InventorsTadahiro Kono, Akio Machida, Toshio Fujino
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Abstract
A doping method includes: a first step of depositing a material solution containing an antimony compound containing elements selected from the group consisting essentially of hydrogen, nitrogen, oxygen, and carbon together with antimony to a surface of a substrate; a second step of drying the material solution to form an antimony compound layer on the substrate; and a third step of performing heat treatment so that antimony in the antimony compound layer is diffused into the substrate.
Claims9
A doping method comprising:
- a first step of depositing a material solution containing an antimony compound containing elements selected from the group consisting of hydrogen, nitrogen, oxygen, and carbon together with antimony to a surface of a substrate;
- a second step of drying the material solution to form an antimony compound layer on the substrate;
- and
- a third step of performing heat treatment so that antimony in the antimony compound layer is diffused into the substrate.
1 more element
A method for producing a semiconductor device, comprising:
- a first step of depositing a material solution containing an antimony compound containing elements selected from the group consisting essentially of hydrogen, nitrogen, oxygen, and carbon together with antimony to a surface of a semiconductor layer;
- a second step of drying the material solution to form an antimony compound layer on the semiconductor layer;
- and
- a third step of performing heat treatment so that antimony in the antimony compound layer is diffused into the semiconductor layer.
1 more element
Dependencies are inferred from the claim text.