Method of manufacturing semiconductor device
AssigneeFujitsu Semiconductor Limited
InventorsMitsugu TAJIMA, Takae Sukegawa
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Abstract
A method of manufacturing a semiconductor device includes forming a gate insulating film over a semiconductor substrate, forming a silicon film over the gate insulating film, forming a resist pattern over the silicon film, etching the silicon film to form a protrusion portion of the silicon film, forming a dummy film over the silicon film, etching the dummy film so that the dummy film is partially remained on sidewalls of the protrusion portion, etching the silicon film using the remaining dummy film to form a gate electrode, and performing ion implantation into the semiconductor substrate to form source/drain regions.
Claims10
A method of manufacturing a semiconductor device comprising:
- forming a gate insulating film over a semiconductor substrate;
- forming a silicon film over the gate insulating film;
- forming a resist pattern over the silicon film;
- etching the silicon film using the resist pattern as a mask to form a protrusion portion of the silicon film;
- forming a dummy film over the silicon film including the protrusion portion after the resist pattern is removed;
- etching the dummy film so that the dummy film partially remains on sidewalls of the protrusion portion;
- etching the silicon film using the remaining dummy film on the sidewalls of the protrusion portion to form a gate electrode;
- and
- performing ion implantation into the semiconductor substrate using the gate electrode as a mask to form source/drain regions.
Dependencies are inferred from the claim text.