US 2011/0033996 A1Published application

Method for producing a conductive nanoparticle memory device

AssigneesCommissariat L' Energie Atomique Et Aux Energies, Centre National De La Recherche Scientifique

InventorsSimon DELEONIBUS, Jean-Marie Basset, Paul Campbell, Thibaut Gutel, Paul-Henri Haumesser, Gilles Marchand, Catherine Santini

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Abstract

A method for producing a memory device with nanoparticles, comprising the steps of: a) forming, in a semi-conductor substrate, source and drain regions, and at least one first dielectric on a zone of the substrate arranged between the source and drain regions and intended to form a channel of the memory device, b) deposition of an ionic liquid, comprising nanoparticles of an electrically conductive material in suspension, covering the first dielectric, c) formation of a deposition of nanoparticles on the first dielectric, d) removal of the remaining ionic liquid, e) forming a second dielectric and a control gate on at least one part of the deposition of nanoparticles.

Claims13

Dependent claims

A method for producing a memory device with nanoparticles, comprising at least the steps of:

a) forming, in a substrate based on at least one semi-conductor, source and drain regions, and at least one first dielectric on at least one zone of the substrate arranged between the source and drain regions and intended to form a channel of the memory device,
b) deposition of at least one ionic liquid, comprising nanoparticles of at least one electrically conductive material in suspension, covering at least said first dielectric,
c) formation of a deposition of said nanoparticles at least on said first dielectric,
d) removal of the remaining ionic liquid,
e) forming at least one second dielectric and at least one control gate on at least one part of the deposition of nanoparticles.

2 more elements

Dependencies are inferred from the claim text.