Semiconductor device and method of manufacturing the same
AssigneeElpida Memory, Inc.
InventorsHiroyuki FUJIMOTO, Shinpei IIJIMA
Life of this patent
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Abstract
A method of forming a semiconductor device includes the following processes. A pillar is formed which stands on a semiconductor substrate. A first insulating film is formed which covers a side surface of the pillar. An upper portion of the first insulating film is removed to expose a side surface of an upper portion of the pillar. A contact plug is formed, which contacts the side surface of the upper portion of the pillar and a top surface of the pillar.
Claims20
A method of forming a semiconductor device, the method comprising:
- forming a pillar standing on a semiconductor substrate;
- forming a first insulating film which covers a side surface of the pillar;
- removing an upper portion of the first insulating film to expose a side surface of an upper portion of the pillar;
- and
- forming a contact plug which contacts the side surface of the upper portion of the pillar and a top surface of the pillar.
A method of forming a semiconductor device, the method comprising:
- forming a first insulating mask over a semiconductor substrate;
- forming a pillar on the semiconductor substrate by using the first insulating mask;
- forming a first diffusion region in the semiconductor substrate, the first diffusion region being near a bottom of the pillar;
- forming a first insulating film which covers a side surface of the pillar;
- forming a first electrode which faces toward the side surface of the pillar through the first insulating film;
- forming a second insulating film which covers the first electrode and the first insulating film;
- removing the first insulating mask to expose a top surface of the pillar;
- forming a second diffusion region at an upper portion of the pillar;
- removing an upper portion of the first insulating film, to expose a side surface of the upper portion of the pillar;
- and
- forming a contact plug which contacts both the top surface of the pillar and the side surface of the upper portion of the pillar.
A method of forming a semiconductor device, the method comprising:
- forming a first insulating mask over a semiconductor substrate;
- forming a pillar on the semiconductor substrate by using the first insulating mask;
- forming a first insulating film which covers a side surface of the pillar;
- forming a second insulating film which covers the first insulating film and the side surface of the pillar;
- removing the first insulating mask to expose a top surface of the pillar;
- removing an upper portion of the first insulating film, to expose a side surface of the upper portion of the pillar;
- and
- forming a contact plug which contacts both the top surface of the pillar and the side surface of the upper portion of the pillar.
Dependencies are inferred from the claim text.