US 2011/0033990 A1 · TRANSISTOR, AND DISPLAY DEVICE, ELECTRONIC DEVICE, AND SEMICONDUCTOR DEVICE USING THE SAME

Abstract

It is an object of an invention disclosed in the present specification to provide a transistor having low contact resistance. In the transistor, a semiconductor film including an impurity element imparting P-type or N-type conductivity, an insulating film formed thereover, and an electrode or a wiring that is electrically connected to the semiconductor film through a contact hole formed at least in the insulating film are included; the semiconductor film has a first range of a concentration of the impurity element (1×1020/cm3 or less) that is included in a deeper region than predetermined depth, and a second range of a concentration of the impurity element (more than 1×1020/cm3) that is included in a shallower region than the predetermined depth; and a deeper region than a portion in contact with the electrode or the wiring in the semiconductor film is in the first range of the concentration of the impurity element.

Claims25

Dependent claims

A method of manufacturing a semiconductor device, comprising:

forming a semiconductor film over a substrate;
forming a first insulating film over the semiconductor film;
forming a gate electrode over the first insulating film;
doping the semiconductor film with a first impurity element through the first insulating film;
etching a part of the first insulating film so as to expose a part of the semiconductor film;
doping the part of the semiconductor film with a second impurity element, so that a peak concentration of the second impurity element in the semiconductor film is located in the upper half of the semiconductor film,
after doping the part of the semiconductor film with the second impurity element, forming an interlayer insulating film over the semiconductor film and the gate electrode;
and
etching both a part of the interlayer insulating film and a part of the semiconductor film by using a gas, so as to form a contact hole in the interlayer insulating film.

6 more elements

Dependencies are inferred from the claim text.

Transistor, and display device, electronic device, and semiconductor device using the same

Life of this patent

Transistor, and display device, electronic device, and semiconductor device using the same

Life of this patent

Abstract

Claims25