Semiconductor device and method for manufacturing the same
AssigneeDenso Corporation
InventorsYasutomi Asai, Hiroshi Ishino
Life of this patent
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Abstract
A semiconductor device includes: a semiconductor element having first and second surfaces, wherein the semiconductor element includes at least one electrode, which is disposed on one of the first and second surfaces; and first and second metallic layers, wherein the first metallic layer is disposed on the first surface of the semiconductor element, and wherein the second metallic layer is disposed on the second surface of the semiconductor element. The one electrode is electrically coupled with one of the first and second metallic layers, which is disposed on the one of the first and second surfaces. The one electrode is coupled with an external circuit through the one of the first and second metallic layers.
Claims12
1-21. (canceled)
A method for manufacturing a semiconductor device comprising:
- preparing a semiconductor wafer having a plurality of semiconductor elements, wherein each semiconductor element includes at least one electrode, which is disposed on one of first and second surfaces of the semiconductor element;
- forming first and second metallic layers on first and second surfaces of the semiconductor wafer, respectively;
- and
- dividing the semiconductor wafer together with the first and second metallic layers into a plurality of semiconductor element chips.
Dependencies are inferred from the claim text.