Growth of n-face led with integrated processing system

A method for fabricating a nitrogen-face (N-face) polarity compound nitride semiconductor device, comprising:

• positioning one or more substrates that provide for N-Face growth into a hydride vapor phase epitaxy (HVPE) chamber;
• depositing a first layer comprising nitrogen and a first group-III element over the one or more substrates that provide for N-face growth;
• transferring the one or more substrates into a first metal organic chemical vapor deposition (MOCVD) chamber without breaking vacuum;
• depositing a second layer comprising nitrogen and a second group-III element different from the first group-III element over the first layer;
• transferring the one or more substrates into a second MOCVD chamber without breaking vacuum;
• and
• depositing a third layer comprising nitrogen and a third group-III element different from the first group-III element and the second group-III element over the second layer in the second MOCVD chamber.

An integrated processing system for fabricating a nitrogen-face (N-face) polarity compound nitride semiconductor device, comprising:

• a transfer chamber;
• a robot assembly disposed in the transfer chamber;
• one or more metalorganic chemical vapor deposition (MOCVD) chambers operable to form a nitrogen containing buffer layer over the one or more substrates in transferable communication with the transfer chamber;
• and
• one or more hydride vapor phase epitaxy (HVPE) chambers operable to form a group III-nitrogen containing layer over the nitrogen containing buffer layer in transferable communication with the transfer region.