Vertical nitride semiconductor light emitting diode and method of manufacturing the same

A method of manufacturing a vertical nitride-based semiconductor LED comprising:

• sequentially forming a buffer layer, an first n-type nitride semiconductor layer, an active layer, and a second p-type nitride semiconductor layer on a substrate;
• forming a second p-electrode on the second p-type nitride semiconductor layer;
• forming a structure support layer on the p-second electrode;
• removing the substrate through an LLO(Laser Lift-Off) process;
• selectively etching a portion of the buffer exposed layer, on which the substrate is removed, so as to flatly expose a substantially flat portion of the first n-type nitride semiconductor layer;
• forming an n-first electrode on the substantially flatly-exposed first n-type nitride semiconductor layer;
• and
• forming irregularities by etching the unetched surface of the exposed layer. on the surface of the buffer layer which is not etched.