Method for forming oxide film on silicon wafer
AssigneeShin-Etsu Handotai Co., Ltd.
InventorsTsuyoshi Ohtsuki, Satoshi Tobe, Yasushi Mizusawa
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Abstract
The present invention provides a method for forming an oxide film on a silicon wafer, comprising: measuring surface roughness of the silicon wafer and/or crystallinity in a surface layer portion of the silicon wafer in advance; adjusting oxidizing conditions for the silicon wafer based on the measurement value; and forming the oxide film on the silicon wafer under the adjusted oxidizing conditions. As a result, there can be provided the method for forming an oxide film by which the oxidizing conditions can be adjusted based on a state of the surface and/or the surface layer of the silicon wafer before forming the oxide film and even an ultrathin oxide film can be thereby accurately formed.
Claims19
1-6. (canceled)
A method for forming an oxide film on a silicon wafer, comprising:
- measuring surface roughness of the silicon wafer and/or crystallinity in a surface layer portion of the silicon wafer in advance;
- adjusting oxidizing conditions for the silicon wafer based on the measurement value;
- and forming the oxide film on the silicon wafer under the adjusted oxidizing conditions.
Dependencies are inferred from the claim text.