Patterning process and resist composition
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsJun Hatakeyama, Kazuhiro Katayama, Youichi Ohsawa, Masaki Ohashi
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AssigneeShin-Etsu Chemical Co., Ltd.
InventorsJun Hatakeyama, Kazuhiro Katayama, Youichi Ohsawa, Masaki Ohashi
Estimating the term…
A pattern is formed by coating a first positive resist composition comprising a copolymer comprising lactone-containing recurring units, acid labile group-containing recurring units and carbamate-containing recurring units, and a photoacid generator onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for inactivation to acid, coating a second positive resist composition comprising a C3-C8 alcohol and an optional C6-C12 ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.
A process for forming a pattern, comprising the steps of:
A resist composition comprising a base resin, a photoacid generator, and an organic solvent, wherein
Dependencies are inferred from the claim text.