Pattern forming process, chemically amplified positive resist composition, and resist-modifying composition
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsTakeru Watanabe, Tsunehiro Nishi, Masashi Iio
Life of this patent
Estimating the term…
Abstract
A pattern is formed by (1) coating a first positive resist composition onto a substrate, baking, patternwise exposing, PEB, and developing to form a first positive resist pattern including a large area feature, (2) applying a resist-modifying composition comprising a basic nitrogen-containing compound and heating to modify the first resist pattern, and (3) coating a second positive resist composition thereon, patternwise exposing, and developing to form a second resist pattern. The large area feature in the first resist pattern has a film retentivity of at least 50% after the second pattern formation.
Claims14
A multiple pattern-forming process comprising the steps of:
- (1) coating a first positive resist composition comprising as a base resin a polymer comprising recurring units adapted to increase alkali solubility under the action of acid and recurring units having lactone structure onto a substrate and baking to form a first resist film, exposing the first resist film to high-energy radiation, post-exposure baking, and developing the first resist film with an alkaline developer to form a first positive resist pattern including a large area pattern feature having a short side of at least 200 nm,
- (2) applying a resist-modifying composition comprising a basic nitrogen-containing compound having a conjugate acid pKa of at least 4 onto the first resist pattern and heating to modify the first resist pattern, and
- (3) coating a second positive resist composition thereon and baking to form a second resist film, exposing the second resist film to high-energy radiation, post-exposure baking, and developing the second resist film with an alkaline developer to form a second resist pattern, wherein
- the large area pattern feature in the first resist pattern has a film retentivity of at least 50% after the formation of the second resist pattern.
A resist-modifying composition comprising an aminosilanol compound having the following general formula (S0), (S1) or (S2), water, and an alcohol solvent,
- wherein AS1 is a straight, branched or cyclic C2-C20 alkylene group, C6-C15 arylene group, or C7-C16 aralkylene group, which may contain a hydroxyl, ether or amino group, RS1 is each independently a C1-C4 alkyl group or ORS2, RS2 is hydrogen or a C1-C6 alkyl group, RS3 is each independently hydrogen, or a C1-C4 alkyl group which may contain a hydroxyl or ether group, RS3 may bond together to form a ring with the nitrogen atom to which they are attached,
- wherein RN1 is hydrogen or a straight, branched or cyclic C1-C20 alkyl group, C6-C10 aryl group, or C2-C12 alkenyl group, which may contain a hydroxyl, ether, ester or amino group, Np is 1 or 2, in the case of Np=1, RN2 is a straight, branched or cyclic C1-C20 alkylene group which may contain an ether, ester or phenylene group, in the case of Np=2, RN2 is the foregoing alkylene group with one carbon-bonded hydrogen atom eliminated, RN3 is each independently hydrogen, a C1-C6 alkyl, C6-C10 aryl, C2-C12 alkenyl, C1-C6 alkoxy, C6-C10 aryloxy, C2-C12 alkenyloxy, C7-C12 aralkyloxy, or hydroxyl group, at least one of RN3 is alkoxy or hydroxyl,
- wherein AN1 is a straight, branched or cyclic C2-C20, alkylene group, C6-C15 arylene or C7-C16, aralkylene group, which may contain a hydroxyl, ether or amino group, RN4 is each independently a C1-C4 alkyl group or ORN5, RN5 is hydrogen or C1-C6 alkyl, RN6 is each independently hydrogen or a C1-C4 alkyl group which may contain hydroxyl or ether group, Np, RN2 and RN3 are as defined above.
Dependencies are inferred from the claim text.