Exposure method using charged particle beam
AssigneeFujitsu Semiconductor Limited
InventorKozo Ogino
Life of this patent
Estimating the term…
Abstract
A charged particle beam exposure method that includes preparing of exposure data for a plurality of device patterns; obtaining of an integral of forward scattering components in an exposure intensity distribution with each of the device patterns near the center of the exposure intensity distribution as domain of integration; correcting of the shape of each of the plurality of device patterns by correcting the exposure data, so that the integral is equal to a reference value; and appropriating of mask patterns within an exposure mask to each of the device patterns following the correction, such that the center of gravity of each of the device patterns matches the center of gravity of the mask pattern appropriated thereto.
Claims11
A charged particle beam exposure method, comprising:
- preparing of exposure data for a plurality of device patterns;
- obtaining of an integral of forward scattering components in an exposure intensity distribution with each of said device patterns near a center of said exposure intensity distribution as domain of integration;
- correcting of a shape of each of said plurality of device patterns by correcting said exposure data, so that said integral is equal to a reference value;
- appropriating of mask patterns within an exposure mask to each of said device patterns following said correction, such that the center of gravity of each of said device patterns matches the center of gravity of the mask pattern appropriated thereto;
- appropriating of exposure amounts to said mask patterns following said appropriation of said mask patterns to each of said device patterns, so that a resist pattern, having a design width in a resist layer exposed by charged particles passing through said mask patterns, is obtained;
- and
- exposing of said resist layer based on said exposure data following said appropriation of exposure amounts.
A semiconductor device manufacturing method, comprising:
- preparing of exposure data for a plurality of device patterns;
- obtaining of an integral of forward scattering components in an exposure intensity distribution with each of said device patterns near a center of said exposure intensity distribution as domain of integration;
- correcting of the shape of each of said plurality of device patterns by correcting said exposure data, so that said integral is equal to a reference value;
- appropriating of mask patterns within an exposure mask to each of said device patterns following said correction, such that the center of gravity of each of said device patterns matches the center of gravity of the mask pattern appropriated thereto;
- appropriating of exposure amounts to said mask patterns following said appropriation of said mask patterns to each of said device patterns, so that a resist pattern, having a design width in a resist layer exposed by charged particles passing through said mask patterns, is obtained;
- exposing of a photoresist layer formed on a semiconductor substrate, based on said exposure data, following said appropriation of exposure amounts;
- developing of said photoresist layer to form a resist pattern;
- and
- etching a film underneath said resist pattern with said resist pattern as a mask, so as to form a device pattern.
Dependencies are inferred from the claim text.