Apparatus and process for carbon nanotube growth
AssigneeMotorola, Inc.
InventorsBernard F. Coll, Scott V. Johnson
Life of this patent
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Abstract
An apparatus is provided for growing high aspect ratio emitters (26) on a substrate (13). The apparatus comprises a housing (10) defining a chamber and includes a substrate holder (12) attached to the housing and positioned within the chamber for holding a substrate having a surface for growing the high aspect ratio emitters (26) thereon. A heating element (17) is positioned near the substrate and being at least one material selected from the group consisting of carbon, conductive cermets, and conductive ceramics. The housing defines an opening (15) into the chamber for receiving a gas into the chamber for forming the high aspect ratio emitters (26).
Claims17
A method comprising:
- providing a substrate having a surface;
- subjecting the substrate to a pressure in the range of 10 to 100 Torr;
- providing a hydrocarbon gas onto the surface;
- providing radiant heat within the range of 1500° C. to 3000° C. from a heating element to heat the hydrocarbon gas thereby causing the hydrocarbon gas to crack and disassociate, the heating element being at least one material selected from the group consisting of carbon, conductive cermets, and conductive ceramics;
- and
- growing high aspect ratio emitters on the surface.
A method comprising:
- providing a substrate having a surface;
- subjecting the substrate to a pressure in the range of 10 to 100 Torr;
- providing a hydrocarbon gas onto the surface;
- providing radiant heat onto the surface from a heating element;
- biasing the heating element for providing a controlled electro-thermal dissociation of the hydrocarbon gas;
- and
- growing high aspect ratio emitters on the surface.
A method comprising:
- providing a substrate having a surface;
- subjecting the substrate to a pressure in the range of 10 to 100 Torr;
- providing a hydrocarbon gas onto the surface;
- biasing the substrate positive with respect to a heating element;
- providing radiant heat within the range of 1500° C. to 3000° C. onto the surface from the heating element;
- and
- growing high aspect ratio emitters on the surface.
Dependencies are inferred from the claim text.