Methods of forming a nanocrystal
AssigneeAgency for Science, Technology and Research
InventorsEnyi Ye, Yin Win Khin, Mingyong Han
Life of this patent
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AssigneeAgency for Science, Technology and Research
InventorsEnyi Ye, Yin Win Khin, Mingyong Han
Estimating the term…
Methods of forming a nanocrystal are provided. The nanocrystal may be a binary nanocrystal of general formula M1A or of general formula M1O, a ternary nanocrystal of general formula M1M2A, of general formula M1AB or of general formula M1M2O or a quaternary nanocrystal of general formula M1M2AB. M1 is a metal of Groups II-IV, Group VII or Group VIII of the PSE. A is an element of Group VI or Group V of the PSE. O is oxygen. A homogenous reaction mixture in a non-polar solvent of low boiling point is formed, that includes a metal precursor containing the metal M1 and, where applicable M2. For an oxygen containing nanocrystal the metal precursor contains an oxygen donor. Where applicable, A is also included in the homogenous reaction mixture. The homogenous reaction mixture is under elevated pressure brought to an elevated temperature that is suitable for forming a nanocrystal.
A method of forming a binary nanocrystal of the general formula M1A, wherein M1 is a metal selected from one of Group II, Group III, Group IV, Group VII and Group VIII of the Periodic System of Elements (PSE), and A is an element selected from Group VI or Group V of the Period System of Elements (PSE), the method comprising:
A method of producing a binary nanocrystal of the general formula M1O, wherein M1 is a metal selected from one of Group II, Group III, Group IV, Group VII and Group VIII of the Periodic System of Elements (PSE), and O is oxygen, the method comprising:
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A method of forming a ternary nanocrystal of the general formula M1M2A, wherein M1 and M2 are independent from each other a metal selected from one of Group II, Group III, Group IV, Group VII and Group VIII of the PSE, and A is an element is selected from Group VI or V of the PSE, the method comprising:
A method of forming a ternary nanocrystal of the general formula M1AB, wherein M1 is a metal selected from one of Group II, Group III, Group IV, Group VII and Group VIII of the PSE, and A and B are independent from each other elements selected from Group V or Group VI of the PSE, the method comprising:
A method of forming a nanocrystal of the general formula M1M2O, wherein M1 and M2 are independent from each other a metal selected from one of Group II, Group III, Group IV, Group VII and Group VIII of the PSE, and O is oxygen, the method comprising:
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A method of forming a quaternary nanocrystal of general formula M1M2AB, wherein M1 and M2 are independently a metal selected from one of Group II, Group III, Group IV, Group VII and Group VIII of the PSE, and A and B are independent from each other an element selected from Group VI or Group V of the PSE, the method comprising:
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Dependencies are inferred from the claim text.