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US 2011/0032967 A1Published application
Single longitudinal mode laser diode
AssigneeBinOptics Corporation
InventorsAlex A. Behfar, Kiyofumi Muro, Christian B. Stagarescu, Alfred T. Schremer
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Abstract
A single-mode, etched facet distributed Bragg reflector laser includes an AlGaInAs/InP laser cavity, a front mirror stack with multiple Fabry-Perot elements, a rear DBR reflector, and a rear detector. The front mirror stack elements and the rear reflector elements include input and output etched facets, and the laser cavity is an etched ridge cavity, all formed from an epitaxial wafer by a two-step lithography and CAIBE process.
Claims20
A photonic structure, comprising:
- a lithographically formed Fabry Perot filter having at least three elements, each of said elements separated from an adjacent one of said elements by a corresponding one of a plurality of gaps;
- wherein at least two of said elements each have a length L;
- at least one of said elements has a length L/2;
- and
- said length L is smaller than 10 μm.
2 more elements
A laser diode, comprising:
- a semiconductor substrate;
- an epitaxial semiconductor structure deposited on said substrate;
- an etched cavity formed in said epitaxial structure, said etched cavity having a front-end and a back-end;
- and
- at least first and second Fabry Perot filter elements each of length L positioned at said back-end of said etched cavity, wherein said back-end of said etched cavity and said first element are separated by a gap of Aλ/2±λ/10, and said first and second elements are separated by a gap of Bλ/2±λ/10, where A and B are positive integers.
2 more elements
Dependencies are inferred from the claim text.