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AssigneesThe Regents of the University of California, Japan Science and Technology Agency
InventorsRobert M. Farrell, Mathew C. Schmidt, Kwang Choong Kim, Hisashi Masui, Daniel F. Feezell, James S. Speck, Steven P. DenBaars, Shuji Nakamura
Estimating the term…
Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation.
An optoelectronic device, comprising:
A method for fabricating an optoelectronic device, comprising:
Dependencies are inferred from the claim text.