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US 2011/0032783 A1Published application
Semiconductor storage apparatus, and method and system for boosting word lines
AssigneeFujitsu Semiconductor Limited
InventorHiroshi YOSHIOKA
Life of this patent
Estimating the term…
Abstract
A semiconductor storage apparatus includes: a word line coupled to a cell transistor; a first capacitor having a first end coupled to the word line; a boost driver coupled to a second end of the first capacitor; a voltage-drop circuit configured to generate a given voltage drop between a first voltage and a second voltage; and a boost-drive circuit configured to boost a voltage at the second end from the second voltage to the first voltage.
Claims10
A semiconductor storage apparatus comprising:
- a word line coupled to a cell transistor;
- a first capacitor having a first end coupled to the word line;
- a boost driver coupled to a second end of the first capacitor;
- a voltage-drop circuit configured to generate a given voltage drop between a first voltage and a second voltage;
- and
- a boost-drive circuit configured to boost a voltage at the second end from the second voltage to the first voltage.
3 more elements
A boost method of a word line comprising:
- generating a given voltage drop between a first voltage and a second voltage;
- setting a word line to a given voltage;
- and
- raising a voltage at a second end of a capacitor having a first end coupled to the word line from the second voltage to the first voltage after the word line is set to the given voltage.
1 more element
A system comprising:
- a memory;
- and
- a controller configured to control the memory,
- wherein the memory includes:
- a word line coupled to a cell transistor;
- a first capacitor having a first end coupled to the word line;
- a boost driver coupled to a second end of the first capacitor;
- a voltage-drop circuit configured to generate a given voltage drop between a first voltage and a second voltage;
- and
- a boost-drive circuit configured to boost a voltage at the second end from the second voltage to the first voltage.
7 more elements
Dependencies are inferred from the claim text.