Power supplies in flash memory devices and systems
AssigneeMosaid Technologies Incorporated
InventorsHong Beom Pyeon, Jin-Ki Kim
Life of this patent
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Abstract
Power supplies in flash memory devices are disclosed. A first section of a flash memory device includes non-volatile memory for storing data. A second section of the flash memory device includes at least first and second pumping circuits. The first pumping circuit receives a first voltage and produces, at an output of the first pumping circuit, a second voltage at a second voltage level that is higher than the first voltage level. The second pumping circuit has an input coupled to the first pumping circuit output for cooperatively employing the first pumping circuit to pump up from a voltage greater than the first voltage to produce a third voltage at a third voltage level that is higher than the second voltage level.
Claims18
A flash memory device comprising:
- a first section including flash memory for storing data;
- and
- a second section including:
- i) at least first and second pumping circuits having outputs, the second section being a peripheral circuit section, the first pumping circuit being configured to increase voltage produced therefrom under control of at least a first oscillation signal, and the second pumping circuit being configured to increase voltage produced therefrom under control of at least a second oscillation signal, different from the first oscillation signal;
- ii) first and second regulator circuits;
- and
- iii) first and second oscillators for providing the first and second oscillation signals respectively, the first regulator circuit coupled to the first pumping circuit output, the first oscillator configured to receive an outputted voltage of the first regulator circuit, the second regulator circuit coupled to the second pumping circuit output, and the second oscillator configured to receive an outputted voltage of the second regulator circuit.
A method of producing voltages in a flash memory device having a first section including flash memory for storing data, and also having a second section that includes i) at least first and second pumping circuits, and iii) first and second oscillators, and the method comprising:
- supplying, within the flash memory device, a first voltage at a first voltage level to the first pumping circuit;
- producing, at an output of the first pumping circuit, a second voltage at a second voltage level that is higher than the first voltage level, the second voltage required for carrying out a first type of memory operation associated with the flash memory;
- producing, at an output of the second pumping circuit, a third voltage by cooperatively employing the first pumping circuit to pump up from a voltage greater than the first voltage, the third voltage at a third voltage level that is higher than the second voltage level, the third voltage required for carrying out a second type of memory operation associated with the flash memory, the second type of memory operation different than the first type of memory operation;
- providing, from the first oscillator, an at least one oscillation signal to the first pumping circuits, the second voltage level increasing under control of the at least one oscillation signal;
- and
- providing, from the second oscillator, an at least another oscillation signal to the second pumping circuit, the at least another oscillation signal different than the at least one oscillation signal, and the third voltage level increasing under control of the at least another oscillation signal.
Dependencies are inferred from the claim text.