Memory and Reading Method Thereof
AssigneeMacronix International Co., Ltd.
InventorYung-Feng Lin
Life of this patent
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Abstract
A reading method applied for a memory, which includes a cell row including a first memory cell coupled to a first bit line and a second memory cell coupled to a second bit line is provided. The reading method comprises the following steps. Firstly, the first bit line coupled to a first terminal of the first memory cell is selected for reading the first memory cell in a time period. Next, the second terminal of the first memory cell is discharged via the second bit line coupled to the second memory cell in the time period.
Claims12
A memory, comprising:
- a memory array, comprising a first memory cell and a second memory cell situated on a selected cell row of the memory array and
- a first bit line and a second bit line respectively coupled to the first and the second memory cells;
- and
- a discharge circuit comprising at least two discharge elements, corresponding to a sense amplifier, for discharging the second bit line when the first memory cell is read.
A reading method for a memory, the memory comprising a cell row, the cell row comprising a first memory cell coupled to a first bit line, and a second memory cell coupled to a second bit line, the reading method comprising:
- selecting the first bit line coupled to a first terminal of the first memory cell for reading the first memory cell in a time period;
- and
- discharging the second bit line coupled to the second memory cell in the time period.
Dependencies are inferred from the claim text.