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US 2011/0032765 A1Published application
Memory Formed By Using Defects
AssigneeNational Taiwan University
InventorsYen-Ting Chen, Ching-Fang Huang, Hung-Chang Sun, Chee Wee Liu
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Abstract
A non-volatile memory is provided. The non-volatile memory comprises at least a silicon-on-insulator transistor including a substrate; an insulating layer disposed on the substrate; an active region disposed on the insulating layer; and an energy barrier device disposed in the active region and outputting a relatively small current when the non-volatile memory is read.
Claims20
A non-volatile memory, comprising:
- at least a silicon-on-insulator transistor including:
- a substrate;
- an insulating layer disposed on the substrate;
- an active region disposed on the insulating layer;
- and
- an energy barrier device disposed in the active region and outputting a relatively small current when the non-volatile memory is read.
3 more elements
A memory, comprising:
- a semiconductor having a first state;
- and
- a defect unit converting the first state into a second state.
A memory, comprising:
- at least a semiconductor including:
- an active region having an accumulation current and a plurality of carriers;
- a gate having a gate voltage;
- and
- a drain having a drain voltage,
- wherein the gate voltage and the drain voltage control a quantity of the plurality of carriers to change the accumulation current.
3 more elements
A method for manufacturing a memory, comprising steps of:
- (a) providing a substrate;
- (b) forming an active region on the substrate;
- (c) detecting whether there is a defect in the active region;
- and
- (d) manufacturing at least a defect in the active region if there is no defect therein.
2 more elements
Dependencies are inferred from the claim text.