Back to results
US 2011/0032763 A1Published application
Semiconductor devices including first and second bit lines
AssigneeSamsung Electronics Co., Ltd.
InventorsDong-Hwa Kwak, Jae-Kwan Park, Jae-Hwang Sim, Jin-Ho Kim, Ki-Nam Kim
Life of this patent
Estimating the term…
Abstract
In some embodiments, a semiconductor device includes first bit lines connected to respective first contacts. Spacers are disposed on sidewalls of the first bit lines. A second bit line is self-alignedly disposed between adjacent spacers, and a second contact is self-aligned with and connected to the second bit line.
Claims11
A semiconductor device comprising:
- a plurality of first bit lines and a plurality of first contacts connected to respective ones of the first bit lines;
- a plurality of spacers on sidewalls of the first bit lines;
- and
- a second bit line self-alignedly disposed between adjacent ones of the spacers, and a second contact self-aligned with and connected to the second bit line.
1 more element
A non-volatile memory device comprising:
- a substrate including a plurality of active regions defined by a device isolation region;
- a string select line, a ground select line, and a plurality of word lines disposed between the string select line and the ground select line, the string and ground select lines and the plurality of word lines crossing over the active regions;
- an insulation layer covering the string select line, the ground select line, the plurality of word lines, and the active regions;
- first contacts through the insulation layer and electrically connected to odd-numbered ones of the active regions;
- first bit lines electrically connected to respective first contacts;
- a plurality of spacers on sidewalls of the first bit lines;
- and
- a second bit line self-alignedly disposed between adjacent ones of the spacers, and a second contact self-aligned with and connected to the second bit line.
5 more elements
Dependencies are inferred from the claim text.