Memory system and related method of programming
AssigneeSamsung Electronics Co., Ltd.
InventorsYong June Kim, Jae hong Kim, Ki Jun Lee
Life of this patent
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Abstract
A method of programming a nonvolatile memory device comprises counting a number of state pairs in a unit of input data, modulating the unit of input data to reduce the number of state pairs contained therein, and programming the modulated unit of input data in the nonvolatile memory device. Each state pair comprises data with a first state and designated for programming in a memory cell connected to a first word line, and data with a second state and designated for programming in a memory cell connected to a second word line adjacent to the first word line. The memory cell connected to the first word line is adjacent to the memory cell connected to the second word line.
Claims15
A method of programming a nonvolatile memory device, comprising:
- counting a number of state pairs in a unit of input data, each state pair comprising data with a first state and designated for programming in a memory cell connected to a first word line, and data with a second state and designated for programming in a memory cell connected to a second word line adjacent to the first word line, wherein the memory cell connected to the first word line is adjacent to the memory cell connected to the second word line;
- modulating the unit of input data to reduce the number of state pairs contained therein;
- and
- programming the modulated unit of input data in the nonvolatile memory device.
A method of programming a nonvolatile memory device, comprising:
- modulating a unit of input data by random rearrangement based on a first seed value to generate a first modulated unit of input data;
- modulating the unit of input data by random rearrangement based on a second seed value to generate a second modulated unit of input data;
- counting a number of state pairs in the first modulated unit of input data and counting a number of state pairs in the second modulated unit of input data;
- and
- programming the first or second modulated unit of input data having the smallest number of state pairs in the nonvolatile memory device;
- wherein each state pair comprises data with a first state and designated for programming in a memory cell connected to a first word line, and data with a second state and designated for programming in a memory cell connected to a second word line adjacent to the first word line, wherein the memory cell connected to the first word line is adjacent to the memory cell connected to the second word line.
A memory system, comprising:
- a nonvolatile memory device comprising a plurality of memory cells arranged in rows connected to corresponding word lines and columns connected to corresponding bit lines;
- and
- a memory controller controlling the nonvolatile memory device,
- wherein the memory controller counts a number of state pairs in a unit of input data, modulates the input data to reduce the number of state pairs, and programs the modulated unit of input data in the nonvolatile memory device, and wherein each state pair comprises data with a first state and designated for programming in a memory cell connected to a first word line, and data with a second state and designated for programming in a memory cell connected to a second word line adjacent to the first word line, wherein the memory cell connected to the first word line is adjacent to the memory cell connected to the second word line.
Dependencies are inferred from the claim text.