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US 2011/0032758 A1Published application
Nonvolatile memory device outputting analog signal and memory system having the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHong Rak Son, Jaehong Kim, Junjin Kong
Life of this patent
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Abstract
A memory system and a nonvolatile memory device therein are disclosed. The memory system comprises a memory device outputting a plurality of analog signals during a read operation, a converter to convert the plurality of analog signals into binary data, and a memory controller to operate an error correction operation on the binary data. The error correction operation uses a soft decision algorithm.
Claims17
A memory system comprising:
- a memory device including a plurality of memory cells, the memory device being configured to output a plurality of analog signals from selected memory cells of the plurality of memory cells during a read operation;
- a converter configured to convert the plurality of analog signal into binary data;
- and
- a memory controller configured to perform an error correction operation on the binary data.
1 more element
A nonvolatile memory device, comprising:
- a memory cell array including a plurality of memory cells;
- an analog output circuit configured to output a plurality of analog signals detected on bit lines coupled to selected memory cells from among the plurality of memory cells during a read operation;
- a voltage generator configured to generate an analog read voltage for the read operation;
- and
- a control logic configured to control the voltage generator to supply the analog read voltage to the selected memory cells, and configured to control the analog output circuit to output the plurality of analog signals externally.
2 more elements
A nonvolatile memory device, comprising:
- a memory cell array including a plurality of memory cells;
- a voltage generator configured to generate an analog read voltage;
- an analog output circuit configured to output a plurality of analog signals detected on bit lines coupled to selected memory cells from among the plurality of memory cells during a read operation, each of the plurality of analog signals being based on the analog read voltage and a threshold voltage of each corresponding memory cell of the selected memory cells;
- and
- a converter configured to convert the plurality of analog signals to binary data by performing a comparison based on each of the plurality of analog signals and the analog read voltage.
2 more elements
Dependencies are inferred from the claim text.