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US 2011/0032754 A1Published application
Phase change memory adaptive programming
AssigneeMicron Technology, Inc.
InventorJun Liu
Life of this patent
Estimating the term…
Abstract
Some embodiments include methods and apparatus having a module configured to program a memory cell using a signal to cause the memory cell to have a programmed resistance value, to adjust a programming parameter value of the signal if the programmed resistance value is outside a target resistance value range, and to repeat at least one of the programming and the adjusting if the programmed resistance value is outside the target resistance value range, the signal including a different programming parameter value each time the programming is repeated.
Claims35
A method comprising:
- programming a memory cell using a first signal to cause the memory cell to have an initial resistance value;
- programming the memory cell using a second signal to cause the memory cell to have a programmed resistance value;
- adjusting a programming parameter value of the second signal if the programmed resistance value is outside a target resistance value range;
- and
- if the programmed resistance value is outside the target resistance value range, repeating at least one of programming the memory cell using the first signal, programming the memory cell using the second signal, and adjusting the programming parameter value of the second signal, wherein the second signal includes a different programming parameter value each time the programming is repeated.
2 more elements
A method comprising:
- programming the memory cell using a first programming parameter to obtain a first programmed resistance value;
- programming the memory cell using a second programming parameter to obtain a second programmed resistance value if the first programmed resistance value is outside a target resistance value range, wherein a value of the second programming parameter is a function of a value of the first programming parameter and a value of a first adjusted programming parameter amount;
- programming the memory cell using a third programming parameter to obtain a third programmed resistance value if programming the memory cell using the second programming parameter is performed and if the second programmed resistance value is outside the target resistance value range, wherein a value of the third programming parameter is a function of the value of the second programming parameter and a value of a second adjusted programming parameter amount;
- wherein the value of the second adjusted programming parameter amount is equal to the value of the first adjusted programming parameter amount if each of the first and second programmed resistance values is outside the target resistance value range and less than a target resistance value;
- wherein the value of the second adjusted programming parameter amount is equal to the value of the first adjusted programming parameter amount if each of the first and second programmed resistance values is outside the target resistance value range and greater than the target resistance value;
- and
- wherein the value of the second adjusted programming parameter amount is less than the value of the first adjusted programming parameter amount if each of the first and second programmed resistance values is outside the target resistance value range and if one of the first and second programmed resistance values is less than the target resistance value and the other one of the first and second programmed resistance values is greater than the target resistance value.
4 more elements
An apparatus comprising:
- a non-volatile memory cell;
- a module configured to program the memory cell using a first pulse having a first programming parameter value to obtain a first programmed resistance value, to program the memory cell using a second pulse having a second programming parameter value to obtain a second programmed resistance value if the first programmed resistance value is outside a target resistance value range, and to program the memory cell using a third pulse having third programming parameter value to obtain a third programmed resistance value if programming the memory cell using the second programming parameter value is performed and if the second programmed resistance value is outside the target resistance value range, the second programming parameter value being a function of the first programming parameter value and a value of a first adjusted parameter amount, the third programming parameter value being a function of the second programming parameter value and a value of a second adjusted parameter amount;
- wherein the value of the second adjusted parameter amount is equal to the value of the first adjusted parameter value amount if each of the first and second programmed resistance values is outside the target resistance value range and less than a target resistance value;
- wherein the value of the second adjusted parameter amount is equal to the value of the first adjusted parameter amount if each of the first and second programmed resistance values is outside the target resistance value range and greater than the target resistance value;
- and
- wherein the value of the second adjusted parameter amount is less than the value of the first adjusted parameter amount if each of the first and second programmed resistance values is outside the target resistance value range and if one of the first and second programmed resistance values is less than the target resistance value and the other one of the first and second programmed resistance values is greater than the target resistance value.
3 more elements
Dependencies are inferred from the claim text.