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AssigneeSamsung Electronics Co., Ltd.
InventorsHyeong-Geun An, Ik-Soo Kim, Hee-Ju Shin, Dong-Hyun Im, Sung-Lae Cho, Eun-Hee Cho
Estimating the term…
A non-volatile memory device includes a plurality of word lines, a plurality of bit lines, and an array of variable resistance memory cells each electrically connected between a respective word line and a respective bit line. Each of the memory cells includes first and second resistance variable patterns electrically connected in series between first and second electrodes. A material composition of the first resistance variable pattern is different than a material composition of the second resistance variable pattern. Multi-bit data states of each memory cell are defined by a contiguous increase in size of a programmable high-resistance volume within the first and second resistance variable patterns.
A multi-bit memory cell programmable into at least four data states, comprising:
The multi-bit resistance variable memory cell of claim 6, wherein the first resistive state is a crystalline state and the second resistive state is an amorphous state.
A non-volatile memory device, comprising a plurality of word lines, a plurality of bit lines, and an array of variable resistance memory cells each electrically connected between a respective word line and a respective bit line, wherein each of the memory cells comprises:
19-20. (canceled)
Dependencies are inferred from the claim text.