Nonvolatile semiconductor memory device
AssigneeKabushiki Kaisha Toshiba
InventorsHiroshi Maejima, Koji Hosono
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Abstract
A nonvolatile semiconductor memory device according to an embodiment includes a memory cell array including: a plurality of first lines; a plurality of second lines intersecting the first lines; and a plurality of memory cells each including a variable resistance element disposed at the intersection of the first and second lines and configured to store an electrically rewritable resistance value as data in a nonvolatile manner, and a control unit configured to detect an amount of a current flowing through the first line when a memory cell is accessed, and adjust the voltage of the first or second line based on the amount of the current.
Claims20
A nonvolatile semiconductor memory device, comprising:
- a memory cell array including a plurality of first lines, a plurality of second lines intersecting the first lines, and a plurality of memory cells each including a variable resistance element disposed at an intersection of the first and second lines and configured to store an electrically rewritable resistance value as data in a nonvolatile manner;
- and
- a control unit configured to detect an amount of a current flowing through the first line when the memory cell is accessed and adjust a voltage of the first or second line based on the amount of the current.
A nonvolatile semiconductor memory device, comprising:
- a memory cell array including a plurality of first lines, a plurality of second lines intersecting the first lines, and a plurality of memory cells each including a variable resistance element disposed at an intersection of the first and second lines and configured to store an electrically rewritable resistance value as data in a nonvolatile manner;
- and
- a control unit configured to detect an amount of a current flowing through the first line when the memory cell is accessed and adjust a voltage of the first or second line based on the amount of the current and a position of the memory cell accessed.
A nonvolatile semiconductor memory device, comprising:
- a memory cell array including a plurality of first lines, a plurality of second lines intersecting the first lines, and a plurality of memory cells each including a variable resistance element disposed at an intersection of the first and second lines and configured to store an electrically rewritable resistance value as data in a nonvolatile manner;
- a control unit configured to detect an amount of a current flowing through the first line when the memory cell is accessed and adjust a voltage of the first or second line based on the amount of the current;
- and
- a voltage regulator circuit configured to adjust the voltage of the first line to a certain level based on a control signal sent by the control unit,
- wherein the control unit includes a replica circuit having a configuration similar to an interconnection line path between the first line and the voltage regulator circuit, causes a current corresponding to the current flowing through the first line to flow through the replica circuit, and controls the voltage regulator circuit based on a voltage drop caused by the replica circuit.
Dependencies are inferred from the claim text.