Colloidal-Processed Silicon Particle Device

A process for forming a colloidal-processed silicon (Si) particle device, the process comprising:

• providing a substrate;
• forming a first electrode overlying the substrate;
• forming a second electrode overlying the substrate, laterally adjacent the first electrode, and separated from the first electrode by a spacing;
• and,
• depositing a colloidal Si particle suspension overlying the first electrode, the second electrode, and the spacing between the electrodes, the colloidal Si particle suspension including a first plurality of nano-sized Si particles and a second plurality of micro-sized Si particles suspended in a non-polar evaporative solvent with alkene.

In a colloidal-processed silicon (Si) particle memory device, a method for creating a residual current in response to a bias voltage, the method comprising:

• providing a memory device including a substrate, a first electrode overlying the substrate, a second electrode overlying the substrate, laterally adjacent the first electrode, and separated from the first electrode by a spacing, and a colloidal-processed Si particle layer overlying the first electrode, the second electrode, and the spacing between the electrodes, the Si particle layer including a first plurality of nano-sized Si particles and a second plurality of micro-sized Si particles;
• applying a negative first bias voltage between the first and second electrodes;
• subsequent to applying the first bias voltage, applying a zero voltage;
• and,
• measuring a negative residual current between the first and second electrodes in response to the zero voltage.

In a colloidal-processed silicon (Si) particle optoelectrical device, a method for sensing light, the method comprising:

• providing a memory device including a substrate, a first electrode overlying the substrate, a second electrode overlying the substrate, laterally adjacent the first electrode, and separated from the first electrode by a spacing, and a colloidal-processed Si particle layer overlying the first electrode, the second electrode, and the spacing between the electrodes, the Si particle layer including a first plurality of nano-sized Si particles and a second plurality of micro-sized Si particles;
• supplying a dark ambient illumination environment;
• applying a first bias voltage between the first and second electrodes;
• measuring a first resistance between the first and second electrodes in response to the dark ambient illumination environment and the first bias voltage;
• illuminating the device with light in the spectrum between ultra-violet and visible;
• and,
• measuring a second resistance, less than the first resistance, in response to the first bias voltage and the light illumination.