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AssigneeBroadcom Corporation
InventorsFrank Hui, Xiangdong Chen, Wei Xia
Estimating the term…
According to one exemplary embodiment, a one-time programmable memory cell includes an access transistor coupled to a shiftable threshold voltage transistor between a bitline and a ground, where the access transistor has a gate coupled to a wordline. The shiftable threshold voltage transistor has a drain and a gate shorted together. A programming operation causes a permanent shift in a threshold voltage of the shiftable threshold voltage transistor to occur in response to a programming voltage on the bitline and the wordline. In one embodiment, the access transistor is an NFET while the shiftable threshold voltage transistor is a PFET. In another embodiment, the access transistor is an NFET and the shiftable threshold voltage transistor is also an NFET. The programming voltage can cause an absolute value of the threshold voltage to permanently increase by at least 50.0 millivolts.
A one-time programmable memory cell comprising:
A method for programming a one-time programmable memory cell, said one-time programmable memory cell comprising an access transistor coupled to a bitline, said access transistor having a gate coupled to a wordline, a shiftable threshold voltage transistor coupled between said access transistor and a ground, said shiftable threshold voltage transistor having a drain and a gate shorted together, said method comprising:
A one-time programmable memory cell comprising:
Dependencies are inferred from the claim text.