Complimentary metal-insulator-metal (mim) capacitors and method of manufacture
AssigneeInternational Business Machines Corporation
InventorsJames S. Dunn, Zhong-Xiang He, Anthony K. Stamper
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Abstract
A low capacitance density, high voltage MIM capacitor and the high density MIM capacitor and a method of manufacture are provided. The method includes depositing a plurality of plates and a plurality of dielectric layers interleaved with one another. The method further includes etching a portion of an uppermost plate of the plurality of plates while protecting other portions of the uppermost plate. The protected other portions of the uppermost plate forms a top plate of a first metal-insulator-metal (MIM) capacitor and the etching exposes a top plate of a second MIM capacitor.
Claims20
A method comprising:
- depositing a plurality of plates and a plurality of dielectric layers interleaved with one another;
- and
- etching a portion of an uppermost plate of the plurality of plates while protecting other portions of the uppermost plate, wherein the protected other portions of the uppermost plate forms a top plate of a first metal-insulator-metal (MIM) capacitor and the etching exposes a top plate of a second MIM capacitor.
A method of forming complimentary metal-insulator-metal (MIM) capacitors comprising forming a low capacitance density, high voltage MIM capacitor and a high density capacitor by:
- depositing a plurality of metal layers and dielectric layers in an interleaved pattern each at a same time;
- and
- etching the plurality of metal layers and dielectric layers, wherein the etching comprises:
- forming a bottom plate of the high density capacitor and the low capacitance density, high voltage MIM capacitor at a same time from a same plate of the plurality of metal layers;
- forming a top plate of the high density capacitor and a floating plate of the low capacitance density, high voltage MIM capacitor at a same time from a same plate of the plurality of metal layers;
- and
- forming a top plate of the low capacitance density, high voltage MIM capacitor from an uppermost of the plurality of metal layers.
A structure comprising:
- a first metal-insulator-metal (MIM) capacitor comprising:
- a bottom metal plate,
- a floating metal plate;
- a top metal plate;
- and
- dielectric material disposed between the first metal plate, the floating metal plate and the top metal plate;
- and
- a second MIM capacitor comprising:
- a bottom metal plate which shares a same layer as the bottom metal plate of the first MIM capacitor and a common deposited metal layer;
- a top metal plate which shares a same level as the floating metal plate and a common deposited metal layer;
- and
- a same dielectric material of the dielectric material that is between the first metal plate and the floating metal plate of the first MIM capacitor.
Dependencies are inferred from the claim text.