Complimentary metal-insulator-metal (mim) capacitors and method of manufacture
AssigneeInternational Business Machines Corporation
InventorsJames S. Dunn, Zhong-Xiang He, Anthony K. Stamper
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Abstract
A high density capacitor and low density capacitor simultaneously formed on a single wafer and a method of manufacture is provided. The method includes depositing a bottom plate on a dielectric material; depositing a low-k dielectric on the bottom plate; depositing a high-k dielectric on the low-k dielectric and the bottom plate; depositing a top plate on the high-k dielectric; and etching a portion of the bottom plate and the high-k dielectric to form a first metal-insulator-metal (MIM) capacitor having a dielectric stack with a first thickness and a second MIM capacitor having a dielectric stack with a second thickness different than the first thickness.
Claims20
A method comprising:
- depositing a bottom plate on a dielectric material;
- depositing a low-k dielectric on the bottom plate;
- depositing a high-k dielectric on the low-k dielectric and the bottom plate;
- depositing a top plate on the high-k dielectric;
- and
- etching a portion of the bottom plate and the high-k dielectric to form a first metal-insulator-metal (MIM) capacitor having a dielectric stack with a first thickness and a second MIM capacitor having a dielectric stack with a second thickness different than the first thickness.
A method of forming complimentary metal-insulator-metal (MIM) capacitors comprising forming a high density capacitor and a low density capacitor on a same level both having a bottom plate, a top plate and a high-k dielectric each deposited in a same processing step.
A structure comprising:
- complimentary metal-insulator-metal (MIM) capacitors on a same wiring level on a substrate, wherein a first of the MIM capacitors comprises a first dielectric stack having a first thickness and a second of the MIM capacitors comprises a second dielectric stack having a second thickness different than the first thickness.
Dependencies are inferred from the claim text.