Sub-Threshold Capfet Sensor for Sensing Analyte, A Method and System Thereof
OwnerNavakanta Bhat, Balaji Jayaraman +2inventors
InventorsNavakanta Bhat, Balaji Jayaraman, S.A. Shivashankar, Rudra Pratap
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Abstract
The present invention relates to high sensitivity chemical sensors, more particularly relates to high sensitivity chemical sensors which are capacitively coupled, FET based analyte sensors. A sub-threshold capacitively coupled Field Effect Transistor (CapFET) sensor for sensing an analyte comprises fixed dielectric placed on substrate of the CapFET and second dielectric sensitive to the analyte, placed between gate terminal of the CapFET and the fixed dielectric, wherein presence of the analyte alters either dielectric constant of the second dielectric or work function of the gate.
Claims26
A sub-threshold Capacitively coupled Field Effect Transistor (CapFET) sensor for sensing an analyte comprising:
- a. fixed dielectric placed on substrate of the CapFET, and
- b. second dielectric sensitive to the analyte, placed between gate terminal of the CapFET and the fixed dielectric, wherein presence of the analyte alters either dielectric constant of the second dielectric or work function of the gate.
A method to sense analyte using sub-threshold CapFET sensor comprising an act of observing change in drain current (ID) of the sensor due to change in either dielectric constant (K) of second dielectric or work function of gate material, by presence of the analyte.
A system to detect presence of analyte comprising:
- a. a sub-threshold CapFET sensor having a fixed dielectric on substrate of the CapFET, and a second dielectric sensitive to analyte, placed between gate terminal of the CapFET and the fixed dielectric, wherein the presence of the analyte or flow of fluid alters either dielectric constant of the second dielectric or work function of the gate, resulting in an exponential change in the drain current (ID) of the sensor,
- b. a means to operate the sensor in sub-threshold region by applying constant gate-to-source voltage (VGS), wherein the voltage (VGS) is less than threshold voltage (VT) of the sensor, and
- c. a means to sense the change in drain current (ID) to detect the presence of the analyte.
Dependencies are inferred from the claim text.