Valuation method of dielectric breakdown lifetime of gate insulating film, valuation device of dielectric breakdown lifetime of gate insulating film and program for evaluating dielectric breakdown lifetime of gate insulating film
AssigneeSony Corporation
InventorShimpei Tsujikawa
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Abstract
A valuation method of a dielectric breakdown lifetime of a gate insulating film for evaluating the dielectric breakdown lifetime of the gate insulating film of a MOS type element includes the steps of: deciding a Weibull slope of lifetime distribution until reaching a soft breakdown of the gate insulating film of the MOS type element; deciding a detection condition of the soft breakdown from the decided Weibull slope after the above step; and executing a dielectric breakdown test by using the decided detection condition.
Claims7
A valuation method of a dielectric breakdown lifetime of a gate insulating film for evaluating the dielectric breakdown lifetime of the gate insulating film of a MOS type element comprising the steps of:
- deciding a Weibull slope of lifetime distribution until reaching a soft breakdown of the gate insulating film of the MOS type element;
- deciding a detection condition of the soft breakdown from the decided Weibull slope after the above step;
- and
- executing a dielectric breakdown test by using the decided detection condition.
A valuation device of a dielectric breakdown lifetime of a gate insulating film for evaluating the dielectric breakdown lifetime of the gate insulating film of a MOS type element comprising:
- a voltage supply unit supplying voltage to the MOS type element for giving electrical stress with respect to the MOS type element;
- a current measurement unit measuring leakage current flowing through the gate insulating film;
- and
- a temperature holding unit holding a test element including the MOS type element to a room temperature or less.
A program for evaluating a dielectric breakdown lifetime of a gate insulating film allowing a computer to execute procedures of:
- deciding a Weibull slope of lifetime distribution until reaching a soft breakdown of the gate insulating film of a MOS type element;
- deciding a detection condition of the soft breakdown from the decided Weibull slope after the above procedure;
- and
- executing a dielectric breakdown test by using the decided detection condition.
Dependencies are inferred from the claim text.