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US 2011/0031952 A1Published application
Semiconductor apparatus and power source circuit
AssigneeKabushiki Kaisha Toshiba
InventorKazutoshi NAKAMURA
Life of this patent
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Abstract
According to one embodiment, a semiconductor apparatus includes a substrate, a semiconductor layer of a first conductivity type, a first semiconductor region of a second conductivity type, a first main electrode, a second semiconductor layer of the second conductivity type, a third semiconductor layer of the first conductivity type, a second main electrode, a gate insulating film, and a gate electrode. An electron injected from the first semiconductor region into the semiconductor layer is recombined with an electron hole injected from the third semiconductor region into the semiconductor layer in a state of a body diode is biased in a forward direction. The body diode includes the semiconductor layer, the first semiconductor region, and the third semiconductor region.
Claims16
A semiconductor apparatus, comprising:
- a substrate;
- a semiconductor layer of a first conductivity type provided in a surface side portion of the substrate;
- a first semiconductor region of a second conductivity type provided in a surface side of the semiconductor layer;
- a first main electrode connected to an inductive load and the first semiconductor region;
- a second semiconductor region of the second conductivity type provided in the surface side of the semiconductor layer apart from the first semiconductor region;
- a third semiconductor region of the first conductivity type provided in the surface side of the semiconductor layer apart from the first semiconductor region;
- a second main electrode connected to a reference potential, the third semiconductor region, and the second semiconductor region;
- a gate insulating film provided above the surface of the semiconductor layer between the first semiconductor region and the second semiconductor region;
- and
- a gate electrode provided above the gate insulating film,
- an electron injected from the first semiconductor region into the semiconductor layer being recombined with an electron hole injected from the third semiconductor region into the semiconductor layer in a state of a body diode being biased in a forward direction, the body diode including the semiconductor layer, the first semiconductor region, and the third semiconductor region.
8 more elements
A semiconductor apparatus, comprising:
- a substrate;
- a semiconductor layer of a first conductivity type provided in a surface side portion of the substrate;
- a first semiconductor region of a second conductivity type provided in a surface side of the semiconductor layer;
- a first main electrode connected to an inductive load and the first semiconductor region;
- a second semiconductor region of the second conductivity type provided in the surface side of the semiconductor layer apart from the first semiconductor region;
- a third semiconductor region of the first conductivity type provided in the surface side of the semiconductor layer apart from the first semiconductor region;
- a second main electrode connected to a reference potential, the third semiconductor region, and the second semiconductor region;
- a gate insulating film provided above the surface of the semiconductor layer between the first semiconductor region and the second semiconductor region;
- a gate electrode provided above the gate insulating film;
- a fourth semiconductor region of the second conductivity type provided in the surface side of the semiconductor layer apart from the first semiconductor region, the second semiconductor region, and the third semiconductor region;
- a fifth semiconductor region of the first conductivity type provided in the surface side of the semiconductor layer apart from the first semiconductor region, the second semiconductor region, and the third semiconductor region;
- and
- a floating electrode connecting the fourth semiconductor region to the fifth semiconductor region.
10 more elements
A power source circuit, comprising:
- a high-side switching device connected to an input voltage line;
- a low-side switching device connected between the high-side switching device and a reference potential;
- an inductive load connected between an output line, and a connection node of the high-side switching device and the low-side switching device;
- and
- a capacitor connected between the output line and the reference potential,
- the low-side switching device including:
- a substrate;
- a semiconductor layer of a first conductivity type provided in a surface side portion of the substrate;
- a first semiconductor region of a second conductivity type provided in a surface side of the semiconductor layer,
- a first main electrode connected to the inductive load and the first semiconductor region;
- a second semiconductor region of the second conductivity type provided in the surface side of the semiconductor layer apart from the first semiconductor region;
- a third semiconductor region of the first conductivity type provided in the surface side of the semiconductor layer apart from the first semiconductor region;
- a second main electrode connected to a reference potential, the third semiconductor region, and the second semiconductor region;
- a gate insulating film provided above the surface of the semiconductor layer between the first semiconductor region and the second semiconductor region;
- and
- a gate electrode provided above the gate insulating film,
- an electron injected from the first semiconductor region into the semiconductor layer recombining with an electron hole injected from the third semiconductor region into the semiconductor layer in a state of a body diode being biased in a forward direction, the body diode including the semiconductor layer, the first semiconductor region, and the third semiconductor region.
14 more elements
Dependencies are inferred from the claim text.