Bond Pad Design for Reducing the Effect of Package Stress
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Shin-Puu Jeng, Hao-Yi Tsai, Hsien-Wei Chen
Life of this patent
Estimating the term…
Abstract
An integrated circuit structure includes a semiconductor substrate, and an active device formed at a front surface of the semiconductor substrate. A bond pad is over the front surface of the semiconductor substrate. The bond pad has a first dimension in a first direction parallel to the front surface of the semiconductor substrate. A bump ball is over the bond pad, wherein the bump ball has a diameter in the first direction, and wherein an enclosure of the first dimension and the diameter is greater than about −1 μm.
Claims18
An integrated circuit structure comprising:
- a semiconductor substrate;
- an active device formed at a front surface of the semiconductor substrate;
- a bond pad over the front surface of the semiconductor substrate, wherein the bond pad has a first dimension in a first direction parallel to the front surface of the semiconductor substrate;
- a bump ball over the bond pad, wherein the bump ball has a diameter in the first direction, and wherein an enclosure of the first dimension and the diameter is greater than about −1 μm.
An integrated circuit structure comprising:
- a semiconductor substrate;
- a first passivation layer over the semiconductor substrate;
- a bond pad over the first passivation layer, wherein the bond pad has a first dimension in a first direction parallel to a front surface of the semiconductor substrate,
- a second passivation layer comprising a first portion level with the bond pad, and a second portion over the bond pad;
- an opening in the second portion of the second passivation layer;
- an under-bump metallurgy (UBM) comprising a first portion filling the opening and contacting the bond pad, and a second portion over the second portion of the second passivation layer;
- and
- a bump ball over the bond pad, wherein the bump ball has a diameter measured in the first direction and is not less than the first dimension.
Dependencies are inferred from the claim text.